Samsung has announced that it has developed the industry's first 512GB DDR5 memory module using through-silicon via (TSV) technology. With the help of TSV approach - which is helpful for interconnecting 3D-stacked silicon chips -, Samsung will be stacking eight layers of 16Gb DRAM chips to offer up to 512GB capacity on a single module. In terms of speed, it is claimed to transfer data at the rate of 7200Mbps. This high-capacity memory has been designed for intensive computing workloads including supercomputing, AI/ML processing, and data analytics.
More~ You are not allowed to view links.
Register or
Login
