Beyond the fancy PR talk, the chip will allow manufacturers to make their phones cheaper and faster due to the simplified internal architecture. Samsung has quoted 50% increase in DRAM performance - from 17 GB/s to 25 GB/s, while NAND flash performance is doubled from 1.5 GB/s to 3 GB/s, compared with LPDDR4H-based UFS 2.2 storage.
The chip will measure only 11.5 x 13 mm, making more space for other internals. Samsung will be able to adapt different capacities, based on manufacturer requirements - the DRAM can be anywhere between 6GB and 12GB, while storage will range from 128GB to 512GB.
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